Strong electron correlation effects in non-volatile electronic memory devices

摘要

We investigate hysteresis effects in a model for non-volatile memory devices.Two mechanisms are found to produce hysteresis effects qualitatively similar tothose often experimentally observed in heterostructures of transition metaloxides. One of them is a novel switching effect based on a metal-insulatortransition due to strong electron correlations at the dielectric/metalinterface. The observed resistance switching phenomenon could be theexperimental realisation of a novel type of strongly correlated electrondevice.